Dopant-induced modifications of GaxIn(1−x)P nanowire-based p−n junctions monolithically integrated on Si(111)

Bologna N, Wirths S, Francaviglia L, Campanini M, Schmid H, Theofylaktopoulos V, Moselund KE, Fontcuberta i Morral A, Erni R, Riel H & Rossell MD
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Bologna, N., Wirths, S., Francaviglia, L., Campanini, M., Schmid, H., Theofylaktopoulos, V., … Rossell, M. D. (2018). Dopant-induced modifications of GaxIn(1−x)P nanowire-based p−n junctions monolithically integrated on Si(111). ACS Applied Materials and Interfaces, 10(38), 32588-32596. https://doi.org/10.1021/acsami.8b10770