The effect of interfacial Ge and RF-Bias on the microstructure and stress evolution upon annealing of Ag/AlN multilayers

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Cancellieri, C., Klyatskina, E., Chiodi, M., Janczak-Rusch, J., & Jeurgens, L. (2018). The effect of interfacial Ge and RF-Bias on the microstructure and stress evolution upon annealing of Ag/AlN multilayers. Applied Sciences, 8(12), 2403 (13 pp.). https://doi.org/10.3390/app8122403