Transition to the quantum hall regime in InAs nanowire cross-junctions

Gooth J, Borg M, Schmid H, Bologna N, Rossell MD, Wirths S, Moselund K, Nielsch K & Riel H
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Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., … Riel, H. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3), 035028 (9 pp.). https://doi.org/10.1088/1361-6641/ab0591