The use of HfO2 in a point contact concept for front interface passivation of Cu(In,Ga)Se2 solar cells

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Löckinger, J., Nishiwaki, S., Bissig, B., Degutis, G., Romanyuk, Y. E., Buecheler, S., & Tiwari, A. N. (2019). The use of HfO2 in a point contact concept for front interface passivation of Cu(In,Ga)Se2 solar cells. Solar Energy Materials and Solar Cells, 195, 213-219. https://doi.org/10.1016/j.solmat.2019.03.009