High saturation magnetization, hysteresis-less long linear response range, and resistance to device fabrication conditions are figures of merit for magnetic materials. Despite advances in materials research, many high-saturating micro- and nanomagnetic materials are hysteresis-prone, have short linear ranges, and are sensitive to oxidation, resulting in device inefficiencies in high-frequency electronics and unpredictable responses in magnetic sensing applications. Holmium oxide is a promising material because of its high magnetic susceptibility, but synthetic options are limited, with low-temperature magnetism incompletely characterized. Here, we present physical vapor deposition synthesis and material characterization of polycrystalline holmium oxide thin films. The product has saturation magnetization exceeding 2 Tesla, linear range (μ₀H) also exceeding 2 Tesla, zero magnetic remanence and coercivity, and resistance to harsh processing conditions including oxygen plasma and concentrated hydrofluoric acid etching, making these thin films ideal for fabricating next-generation nanoscale magnetic devices in advanced scientific and engineering applications.