The Si3N4/TiN interface: 3. Si3N4/TiN(001) grown with a ―150 V substrate bias and analyzed in situ using angle-resolved X-ray photoelectron sp

Haasch RT, Patscheider J, Hellgren N, Petrov I & Greene JE
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Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 3. Si3N4/TiN(001) grown with a ―150 V substrate bias and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 52-61. https://doi.org/10.1116/11.20121003