Analysis of edge threading dislocations b⃗ =1/2(110) in three dimensional Ge crystals grown on (001)-Si substrates

Arroyo Rojas Dasilva Y, Rossell MD, Keller D, Gröning P, Isa F, Kreiliger T, von Känel H, Isella G & Erni R
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Arroyo Rojas Dasilva, Y., Rossell, M. D., Keller, D., Gröning, P., Isa, F., Kreiliger, T., … Erni, R. (2015). Analysis of edge threading dislocations b⃗ =1/2(110) in three dimensional Ge crystals grown on (001)-Si substrates. Applied Physics Letters, 107(9), 093501 (4 pp.). https://doi.org/10.1063/1.4929422