Comparison of silicon and 4H silicon carbide patterning using focused ion beams

Veerapandian SKP, Beuer S, Rumler M, Stumpf F, Thomas K, Pillatsch L, Michler J, Frey L & Rommel M
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Veerapandian, S. K. P., Beuer, S., Rumler, M., Stumpf, F., Thomas, K., Pillatsch, L., … Rommel, M. (2015). Comparison of silicon and 4H silicon carbide patterning using focused ion beams. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 365, 44-49. https://doi.org/10.1016/j.nimb.2015.07.079