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	Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy Piazza, V., Wirths, S., Bologna, N., Ahmed, A. A., Bayle, F., Schmid, H., … Tchernycheva, M. (2019). Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy. Applied Physics Letters, 114(10), 103101 (4 pp.). https://doi.org/10.1063/1.5085405 Detailed Record Published Version
	Dopant-induced modifications of Ga<sub>x</sub>In<sub>(1−x)</sub>P nanowire-based p−n junctions monolithically integrated on Si(111) Bologna, N., Wirths, S., Francaviglia, L., Campanini, M., Schmid, H., Theofylaktopoulos, V., … Rossell, M. D. (2018). Dopant-induced modifications of Ga_xIn_(1−x)P nanowire-based p−n junctions monolithically integrated on Si(111). ACS Applied Materials and Interfaces, 10(38), 32588-32596. https://doi.org/10.1021/acsami.8b10770 Detailed Record Published Version
	Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy Knoedler, M., Bologna, N., Schmid, H., Borg, M., Moselund, K. E., Wirths, S., … Riel, H. (2017). Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy. Crystal Growth and Design, 17(12), 6297-6302. https://doi.org/10.1021/acs.cgd.7b00983 Detailed Record Published Version