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	Transition to the quantum hall regime in InAs nanowire cross-junctions Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., … Riel, H. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3), 035028 (9 pp.). https://doi.org/10.1088/1361-6641/ab0591 Detailed Record Published Version
	Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon Gooth, J., Schaller, V., Wirths, S., Schmid, H., Borg, M., Bologna, N., … Riel, H. (2017). Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon. Applied Physics Letters, 110(8), 083105 (5 pp.). https://doi.org/10.1063/1.4977031 Detailed Record Published Version
	Manipulating surface states of III–V nanowires with uniaxial stress Signorello, G., Sant, S., Bologna, N., Schraff, M., Drechsler, U., Schmid, H., … Riel, H. (2017). Manipulating surface states of III–V nanowires with uniaxial stress. Nano Letters, 17(5), 2816-2824. https://doi.org/10.1021/acs.nanolett.6b05098 Detailed Record Published Version