| Transition to the quantum hall regime in InAs nanowire cross-junctions
Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., … Riel, H. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3), 035028 (9 pp.). https://doi.org/10.1088/1361-6641/ab0591 |
| Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy
Piazza, V., Wirths, S., Bologna, N., Ahmed, A. A., Bayle, F., Schmid, H., … Tchernycheva, M. (2019). Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy. Applied Physics Letters, 114(10), 103101 (4 pp.). https://doi.org/10.1063/1.5085405 |
| Dopant-induced modifications of Ga<sub>x</sub>In<sub>(1−x)</sub>P nanowire-based p−n junctions monolithically integrated on Si(111)
Bologna, N., Wirths, S., Francaviglia, L., Campanini, M., Schmid, H., Theofylaktopoulos, V., … Rossell, M. D. (2018). Dopant-induced modifications of GaxIn(1−x)P nanowire-based p−n junctions monolithically integrated on Si(111). ACS Applied Materials and Interfaces, 10(38), 32588-32596. https://doi.org/10.1021/acsami.8b10770 |
| Stair-rod dislocation cores acting as one-dimensional charge channels in GaAs nanowires
Bologna, N., Agrawal, P., Campanini, M., Knödler, M., Rossell, M. D., Erni, R., & Passerone, D. (2018). Stair-rod dislocation cores acting as one-dimensional charge channels in GaAs nanowires. Physical Review Materials, 2(1), 014603 (6 pp.). https://doi.org/10.1103/PhysRevMaterials.2.014603 |
| High-mobility GaSb nanostructures cointegrated with InAs on Si
Borg, M., Schmid, H., Gooth, J., Rossell, M. D., Cutaia, D., Knoedler, M., … Riel, H. (2017). High-mobility GaSb nanostructures cointegrated with InAs on Si. ACS Nano, 11(3), 2554-2560. https://doi.org/10.1021/acsnano.6b04541 |
| Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
Gooth, J., Schaller, V., Wirths, S., Schmid, H., Borg, M., Bologna, N., … Riel, H. (2017). Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon. Applied Physics Letters, 110(8), 083105 (5 pp.). https://doi.org/10.1063/1.4977031 |
| Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
Knoedler, M., Bologna, N., Schmid, H., Borg, M., Moselund, K. E., Wirths, S., … Riel, H. (2017). Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy. Crystal Growth and Design, 17(12), 6297-6302. https://doi.org/10.1021/acs.cgd.7b00983 |
| Manipulating surface states of III–V nanowires with uniaxial stress
Signorello, G., Sant, S., Bologna, N., Schraff, M., Drechsler, U., Schmid, H., … Riel, H. (2017). Manipulating surface states of III–V nanowires with uniaxial stress. Nano Letters, 17(5), 2816-2824. https://doi.org/10.1021/acs.nanolett.6b05098 |
