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Effect of thermal annealing on the interface quality of Ge/Si heterostructures
Arroyo Rojas Dasilva, Isa, F., Isella, G., Erni, R., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Effect of thermal annealing on the interface quality of Ge/Si heterostructures. Scripta Materialia, 170, 52-56. https://doi.org/10.1016/j.scriptamat.2019.05.025
A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates
Kozak, R., Prieto, I., Arroyo Rojas Dasilva, Y., Erni, R., von Känel, H., Bona, G. L., & Rossell, M. D. (2018). A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates. Micron, 113, 83-90. https://doi.org/10.1016/j.micron.2018.06.018
Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates
Arroyo Rojas Dasilva, Y., Rossell, M. D., Isa, F., Erni, R., Isella, G., von Känel, H., & Gröning, P. (2017). Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates. Scripta Materialia, 127, 169-172. https://doi.org/10.1016/j.scriptamat.2016.09.003
Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures
Kozak, R., Prieto, I., Arroyo Rojas Dasilva, Y., Erni, R., Skibitzki, O., Capellini, G., … Rossell, M. D. (2017). Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures. Philosophical Magazine, 97(31), 2845-2857. https://doi.org/10.1080/14786435.2017.1355117