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Mapping the structure of oxygen-doped wurtzite aluminum nitride coatings from <em>ab initio</em> random structure search and experiments
Gasparotto, P., Fischer, M., Scopece, D., Liedke, M. O., Butterling, M., Wagner, A., … Pignedoli, C. A. (2021). Mapping the structure of oxygen-doped wurtzite aluminum nitride coatings from ab initio random structure search and experiments. ACS Applied Materials and Interfaces, 13(4), 5762-5771. https://doi.org/10.1021/acsami.0c19270
Arsenic-induced faceted lateral nanoprisms array on Si (1 0 3) surface
Wang, X. J., Scopece, D., Wang, J. Z., Fujikawa, Y., Huang, C. L., Sakurai, T., & Chen, G. (2019). Arsenic-induced faceted lateral nanoprisms array on Si (1 0 3) surface. Applied Surface Science, 463, 713-720. https://doi.org/10.1016/j.apsusc.2018.08.255
Validation of an embedded-atom copper classical potential via bulk and nanostructure simulations
Kozlowski, M., Scopece, D., Janczak-Rusch, J., Jeurgens, L. P. H., Kozubski, R., & Passerone, D. (2017). Validation of an embedded-atom copper classical potential via bulk and nanostructure simulations. In R. Kozubski (Ed.), Diffusion foundations: Vol. 12. Multiscale modelling of diffusion – controlled phenomena in condensed matter (pp. 74-92). https://doi.org/10.4028/www.scientific.net/DF.12.74
Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge
Scopece, D., Döbeli, M., Passerone, D., Maeder, X., Neels, A., Widrig, B., … Ramm, J. (2016). Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge. Science and Technology of Advanced Materials, 17(1), 20-28. https://doi.org/10.1080/14686996.2016.1140308
Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures
Bollani, M., Chrastina, D., Gagliano, L., Rossetto, L., Scopece, D., Barget, M., … Bonera, E. (2015). Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures. Applied Physics Letters, 107(8), 083101 (5 pp.). https://doi.org/10.1063/1.4928981
Comment on: "An improved molecular dynamics potential for the Al–O system" Computational Materials Science 53, 483 (2012)
Scopece, D., & Thijsse, B. J. (2015). Comment on: "An improved molecular dynamics potential for the Al–O system" Computational Materials Science 53, 483 (2012). Computational Materials Science, 104, 143-146. https://doi.org/10.1016/j.commatsci.2015.03.050
Interpolating function of the strain relief of epitaxial quantum dots via an alternative morphological descriptor
Scopece, D. (2015). Interpolating function of the strain relief of epitaxial quantum dots via an alternative morphological descriptor. Physical Review B, 91(19), 195318 (9 pp.). https://doi.org/10.1103/PhysRevB.91.195318
Self-assembled in-plane Ge nanowires on rib-patterned Si (1 1 10) templates
Du, L., Scopece, D., Springholz, G., Schäffler, F., & Chen, G. (2014). Self-assembled in-plane Ge nanowires on rib-patterned Si (1 1 10) templates. Physical Review B, 90, 075308 (6 pp.). https://doi.org/10.1103/PhysRevB.90.075308
Surface layer evolution caused by the bombardment with ionized metal vapor
Döbeli, M., Dommann, A., Maeder, X., Neels, A., Passerone, D., Rudigier, H., … Ramm, J. (2014). Surface layer evolution caused by the bombardment with ionized metal vapor. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 332, 337-340. https://doi.org/10.1016/j.nimb.2014.02.091
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis
Scopece, D., Montalenti, F., Bollani, M., Chrastina, D., & Bonera, E. (2014). Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis. Semiconductor Science and Technology, 29(9), 095012 (11 pp.). https://doi.org/10.1088/0268-1242/29/9/095012
Epilayer thickness and strain dependence of Ge(113) surface energies
Scopece, D., & Beck, M. J. (2013). Epilayer thickness and strain dependence of Ge(113) surface energies. Physical Review B, 87(15), 155310 (7 pp.). https://doi.org/10.1103/PhysRevB.87.155310