| Arsenic-induced faceted lateral nanoprisms array on Si (1 0 3) surface
Wang, X. J., Scopece, D., Wang, J. Z., Fujikawa, Y., Huang, C. L., Sakurai, T., & Chen, G. (2019). Arsenic-induced faceted lateral nanoprisms array on Si (1 0 3) surface. Applied Surface Science, 463, 713-720. https://doi.org/10.1016/j.apsusc.2018.08.255 |
| Validation of an embedded-atom copper classical potential via bulk and nanostructure simulations
Kozlowski, M., Scopece, D., Janczak-Rusch, J., Jeurgens, L. P. H., Kozubski, R., & Passerone, D. (2017). Validation of an embedded-atom copper classical potential via bulk and nanostructure simulations. Diffusion Foundations, 12, 74-92. https://doi.org/10.4028/www.scientific.net/DF.12.74 |
| Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge
Scopece, D., Döbeli, M., Passerone, D., Maeder, X., Neels, A., Widrig, B., … Ramm, J. (2016). Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge. Science and Technology of Advanced Materials, 17(1), 20-28. https://doi.org/10.1080/14686996.2016.1140308 |
| Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures
Bollani, M., Chrastina, D., Gagliano, L., Rossetto, L., Scopece, D., Barget, M., … Bonera, E. (2015). Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures. Applied Physics Letters, 107(8), 083101 (5 pp.). https://doi.org/10.1063/1.4928981 |
| Comment on: "An improved molecular dynamics potential for the Al–O system" Computational Materials Science 53, 483 (2012)
Scopece, D., & Thijsse, B. J. (2015). Comment on: "An improved molecular dynamics potential for the Al–O system" Computational Materials Science 53, 483 (2012). Computational Materials Science, 104, 143-146. https://doi.org/10.1016/j.commatsci.2015.03.050 |
| Interpolating function of the strain relief of epitaxial quantum dots via an alternative morphological descriptor
Scopece, D. (2015). Interpolating function of the strain relief of epitaxial quantum dots via an alternative morphological descriptor. Physical Review B, 91(19), 195318 (9 pp.). https://doi.org/10.1103/PhysRevB.91.195318 |
| Self-assembled in-plane Ge nanowires on rib-patterned Si (1 1 10) templates
Du, L., Scopece, D., Springholz, G., Schäffler, F., & Chen, G. (2014). Self-assembled in-plane Ge nanowires on rib-patterned Si (1 1 10) templates. Physical Review B, 90, 075308 (6 pp.). https://doi.org/10.1103/PhysRevB.90.075308 |
| Surface layer evolution caused by the bombardment with ionized metal vapor
Döbeli, M., Dommann, A., Maeder, X., Neels, A., Passerone, D., Rudigier, H., … Ramm, J. (2014). Surface layer evolution caused by the bombardment with ionized metal vapor. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 332, 337-340. https://doi.org/10.1016/j.nimb.2014.02.091 |
| Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis
Scopece, D., Montalenti, F., Bollani, M., Chrastina, D., & Bonera, E. (2014). Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis. Semiconductor Science and Technology, 29(9), 095012 (11 pp.). https://doi.org/10.1088/0268-1242/29/9/095012 |
| <em>SOWOS</em>: An open-source program for the three-dimensional Wulff construction
Scopece, D. (2013). SOWOS: An open-source program for the three-dimensional Wulff construction. Journal of Applied Crystallography, 46(3), 811-816. https://doi.org/10.1107/S0021889813005426 |
| Epilayer thickness and strain dependence of Ge(113) surface energies
Scopece, D., & Beck, M. J. (2013). Epilayer thickness and strain dependence of Ge(113) surface energies. Physical Review B, 87(15), 155310 (7 pp.). https://doi.org/10.1103/PhysRevB.87.155310 |