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Low temperature covalent wafer bonding for X-ray imaging detectors
Razek, N., Neves, J., Le Corre, P., Rüedi, P. F., Quaglia, R., Arroyo Rojas Dasilva, Y., & von Känel, H. (2020). Low temperature covalent wafer bonding for X-ray imaging detectors. Japanese Journal of Applied Physics, 59(SB), SBBB06 (3 pp.). https://doi.org/10.7567/1347-4065/ab4970
Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM
Arroyo Rojas Dasilva, Y., Erni, R., Isa, F., Isella, G., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM. Acta Materialia, 167, 159-166. https://doi.org/10.1016/j.actamat.2019.01.031
Effect of thermal annealing on the interface quality of Ge/Si heterostructures
Arroyo Rojas Dasilva, Isa, F., Isella, G., Erni, R., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Effect of thermal annealing on the interface quality of Ge/Si heterostructures. Scripta Materialia, 170, 52-56. https://doi.org/10.1016/j.scriptamat.2019.05.025
X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers
Meduňa, M., Kreiliger, T., Mauceri, M., Puglisi, M., Mancarella, F., La Via, F., … Känel, H. von. (2019). X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(0 0 1) wafers. Journal of Crystal Growth, 507, 70-76. https://doi.org/10.1016/j.jcrysgro.2018.10.046
Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture
Albani, M., Marzegalli, A., Bergamaschini, R., Mauceri, M., Crippa, D., La Via, F., … Miglio, L. (2018). Solving the critical thermal bowing in 3C-SiC/Si(111) by a tilting Si pillar architecture. Journal of Applied Physics, 123(18), 185703 (9 pp.). https://doi.org/10.1063/1.5019325
Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding
Jung, A., Zhang, Y., Arroyo Rojas Dasilva, Y., Isa, F., & von Känel, H. (2018). Electrical properties of Si-Si interfaces obtained by room temperature covalent wafer bonding. Journal of Applied Physics, 123(8), 085701 (5 pp.). https://doi.org/10.1063/1.5020139
A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates
Kozak, R., Prieto, I., Arroyo Rojas Dasilva, Y., Erni, R., von Känel, H., Bona, G. L., & Rossell, M. D. (2018). A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates. Micron, 113, 83-90. https://doi.org/10.1016/j.micron.2018.06.018
Growth temperature dependent strain in relaxed Ge microcrystals
Meduňa, M., Falub, C. V., Isa, F., & von Känel, H. (2018). Growth temperature dependent strain in relaxed Ge microcrystals. Thin Solid Films, 664, 115-123. https://doi.org/10.1016/j.tsf.2018.08.033
Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals
Meduňa, M., Isa, F., Jung, A., Marzegalli, A., Albani, M., Isella, G., … von Känel, H. (2018). Lattice tilt and strain mapped by X-ray scanning nanodiffraction in compositionally graded SiGe/Si microcrystals. Journal of Applied Crystallography, 51(2), 368-385. https://doi.org/10.1107/S1600576718001450
Dislocation-free SiGe/Si heterostructures
Montalenti, F., Rovaris, F., Bergamaschini, R., Miglio, L., Salvalaglio, M., Isella, G., … von Känel, H. (2018). Dislocation-free SiGe/Si heterostructures. Crystals, 8(6), 257 (16 pp.). https://doi.org/10.3390/cryst8060257
Si-Ge heterostructures fabricated by room temperature wafer bonding
Razek, N., Dragoi, V., Jung, A., & von Känel, H. (2018). Si-Ge heterostructures fabricated by room temperature wafer bonding. In C. S. Tan, T. Suga, H. Baumgart, F. Fournel, M. Goorsky, K. D. Hobart, & R. Knechtel (Eds.), ECS transcations: Vol. 86. Semiconductor wafer bonding: science, technology, and applications 15 (pp. 191-197). https://doi.org/10.1149/08605.0191ecst
Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates
Arroyo Rojas Dasilva, Y., Rossell, M. D., Isa, F., Erni, R., Isella, G., von Känel, H., & Gröning, P. (2017). Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates. Scripta Materialia, 127, 169-172. https://doi.org/10.1016/j.scriptamat.2016.09.003
Strain engineering in highly mismatched SiGe/Si heterostructures
Isa, F., Jung, A., Salvalaglio, M., Arroyo Rojas Dasilva, Y., Marozau, I., Meduňa, M., … von Känel, H. (2017). Strain engineering in highly mismatched SiGe/Si heterostructures. Materials Science in Semiconductor Processing, 70, 117-122. https://doi.org/10.1016/j.mssp.2016.08.019
A tool for automatic recognition of [110] tilt grain boundaries in zincblende-type crystals
Kozak, R., Kurdzesau, F., Prieto, I., Skibitzki, O., Schroeder, T., Arroyo Rojas Dasilva, Y., … Rossell, M. D. (2017). A tool for automatic recognition of [110] tilt grain boundaries in zincblende-type crystals. Journal of Applied Crystallography, 50(5), 1299-1306. https://doi.org/10.1107/S1600576717010858
Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures
Kozak, R., Prieto, I., Arroyo Rojas Dasilva, Y., Erni, R., Skibitzki, O., Capellini, G., … Rossell, M. D. (2017). Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures. Philosophical Magazine, 97(31), 2845-2857. https://doi.org/10.1080/14786435.2017.1355117
Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy
Prieto, I., Kozak, R., Skibitzki, O., Rossell, M. D., Zaumseil, P., Capellini, G., … von Känel, H. (2017). Bi-modal nanoheteroepitaxy of GaAs on Si by metal organic vapor phase epitaxy. Nanotechnology, 28(13), 135701 (8 pp.). https://doi.org/10.1088/1361-6528/aa5ec4
Selective nucleation of GaAs on Si nanofacets
Prieto, I., Kozak, R., Skibitzki, O., Rossell, M. D., Schroeder, T., Erni, R., & von Känel, H. (2017). Selective nucleation of GaAs on Si nanofacets. Small, 13(22), 1603122 (5 pp.). https://doi.org/10.1002/smll.201603122
Site controlled InAs/GaAs nanostructures on Si nano-tips
Prieto, I., Kozak, R., Skibitzki, O., Martín-Sánchez, J., Fromherz, T., Rossell, M. D., … von Känel, H. (2017). Site controlled InAs/GaAs nanostructures on Si nano-tips. In Advanced photonics congress (IPR, Networks, NOMA, PS, Sensors, SPPCom) (p. ITu2A.6 (4 pp.). https://doi.org/10.1364/IPRSN.2017.ITu2A.6
Three-dimensional SiGe/Si heterostructures: switching the dislocation sign by substrate under-etching
Rovaris, F., Isa, F., Gatti, R., Jung, A., Isella, G., Montalenti, F., & von Känel, H. (2017). Three-dimensional SiGe/Si heterostructures: switching the dislocation sign by substrate under-etching. Physical Review Materials, 1(7), 073602 (8 pp.). https://doi.org/10.1103/PhysRevMaterials.1.073602
Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE
Skibitzki, O., Prieto, I., Kozak, R., Capellini, G., Zaumseil, P., Arroyo Rojas Dasilva, Y., … Schroeder, T. (2017). Structural and optical characterization of GaAs nano-crystals selectively grown on Si nano-tips by MOVPE. Nanotechnology, 28(13), 135301 (10 pp.). https://doi.org/10.1088/1361-6528/aa5ec1