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Transition to the quantum hall regime in InAs nanowire cross-junctions
Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., … Riel, H. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3), 035028 (9 pp.). https://doi.org/10.1088/1361-6641/ab0591
Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy
Piazza, V., Wirths, S., Bologna, N., Ahmed, A. A., Bayle, F., Schmid, H., … Tchernycheva, M. (2019). Nanoscale analysis of electrical junctions in InGaP nanowires grown by template-assisted selective epitaxy. Applied Physics Letters, 114(10), 103101 (4 pp.). https://doi.org/10.1063/1.5085405
III-V vertical nanowires grown on Si by template-assisted selective epitaxy for tandem solar cells
Vico Triviño, N., Staudinger, P., Bologna, N., Riel, H., Moselund, K., & Schmid, H. (2019). III-V vertical nanowires grown on Si by template-assisted selective epitaxy for tandem solar cells. In Optical devices and materials for solar energy and solid-state lighting. https://doi.org/10.1364/PVLED.2019.PM2C.5
Stair-rod dislocation cores acting as one-dimensional charge channels in GaAs nanowires
Bologna, N., Agrawal, P., Campanini, M., Knödler, M., Rossell, M. D., Erni, R., & Passerone, D. (2018). Stair-rod dislocation cores acting as one-dimensional charge channels in GaAs nanowires. Physical Review Materials, 2(1), 014603 (6 pp.). https://doi.org/10.1103/PhysRevMaterials.2.014603
High-mobility GaSb nanostructures cointegrated with InAs on Si
Borg, M., Schmid, H., Gooth, J., Rossell, M. D., Cutaia, D., Knoedler, M., … Riel, H. (2017). High-mobility GaSb nanostructures cointegrated with InAs on Si. ACS Nano, 11(3), 2554-2560. https://doi.org/10.1021/acsnano.6b04541
Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon
Gooth, J., Schaller, V., Wirths, S., Schmid, H., Borg, M., Bologna, N., … Riel, H. (2017). Ballistic one-dimensional transport in InAs nanowires monolithically integrated on silicon. Applied Physics Letters, 110(8), 083105 (5 pp.). https://doi.org/10.1063/1.4977031
Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy
Knoedler, M., Bologna, N., Schmid, H., Borg, M., Moselund, K. E., Wirths, S., … Riel, H. (2017). Observation of twin-free GaAs nanowire growth using template-assisted selective epitaxy. Crystal Growth and Design, 17(12), 6297-6302. https://doi.org/10.1021/acs.cgd.7b00983