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Noise tailoring in memristive filaments
Sánta, B., Balogh, Z., Pósa, L., Krisztián, D., Török, T. N., Molnár, D., … Halbritter, A. (2021). Noise tailoring in memristive filaments. ACS Applied Materials and Interfaces, 13(6), 7453-7460. https://doi.org/10.1021/acsami.0c21156
A non-oxidizing fabrication method for lithographic break junctions of sensitive metals
Nyáry, A., Gubicza, A., Overbeck, J., Pósa, L., Makk, P., Calame, M., … Csontos, M. (2020). A non-oxidizing fabrication method for lithographic break junctions of sensitive metals. Nanoscale Advances, 2(9), 3829-3833. https://doi.org/10.1039/D0NA00498G
Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions
Sánta, B., Molnár, D., Haiber, P., Gubicza, A., Szilágyi, E., Zolnai, Z., … Csontos, M. (2020). Nanosecond resistive switching in Ag/AgI/PtIr nanojunctions. Beilstein Journal of Nanotechnology, 11, 92-100. https://doi.org/10.3762/bjnano.11.9
Breaking the quantum PIN code of atomic synapses
Török, T. N., Csontos, M., Makk, P., & Halbritter, A. (2020). Breaking the quantum PIN code of atomic synapses. Nano Letters, 20, 1192-1200. https://doi.org/10.1021/acs.nanolett.9b04617
Universal 1/<em>f</em> type current noise of Ag filaments in redox-based memristive nanojunctions
Sánta, B., Balogh, Z., Gubicza, A., Pósa, L., Krisztián, D., Mihály, G., … Halbritter, A. (2019). Universal 1/f type current noise of Ag filaments in redox-based memristive nanojunctions. Nanoscale, 11(11), 4719-4725. https://doi.org/10.1039/C8NR09985E
<i>In-situ</i> impedance matching in Nb/Nb<sub>2</sub>O<sub>5</sub>/Ptlr memristive nanojunctions for ultra-fast neuromorphic operation
Molnár, D., Török, T. N., Sánta, B., Gubicza, A., Magyarkuti, A., Hauert, R., … Csontos, M. (2018). In-situ impedance matching in Nb/Nb2O5/Ptlr memristive nanojunctions for ultra-fast neuromorphic operation. Nanoscale, 10(41), 19290-19296. https://doi.org/10.1039/C8NR06226A
Multiple physical timescales and dead time rule in few-nm sized graphene-SiOx-graphene memristors
Pósa, L., El Abbassi, M., Makk, P., Sánta, B., Nef, C., Csontos, M., … Halbritter, A. (2017). Multiple physical timescales and dead time rule in few-nm sized graphene-SiOx-graphene memristors. Nano Letters, 17(11), 6783-6789. https://doi.org/10.1021/acs.nanolett.7b03000