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Interface formation between CuIn<SUB>1-</SUB><I><SUB>x</SUB></I>Ga<I><SUB>x</SUB></I>Se<SUB>2</SUB> absorber and In<SUB>2</SUB>S<SUB>3</SUB> buffer layer deposited by ultrasonic spray pyrolysis
Buecheler, S., Pianezzi, F., Fella, C., Chirila, A., Decock, K., Burgelman, M., & Tiwari, A. N. (2011). Interface formation between CuIn1-xGaxSe2 absorber and In2S3 buffer layer deposited by ultrasonic spray pyrolysis. Thin Solid Films, 519(21), 7560-7563. https://doi.org/10.1016/j.tsf.2011.01.370