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  • (-) Empa Laboratories = 299 Electron Microscopy Center
  • (-) Publication Year = 2010 - 2019
  • (-) Empa Authors ≠ Erni, Rolf
  • (-) Publication Type ≠ Journal Article
  • (-) Empa Authors = Bologna, Nicolas
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III-V vertical nanowires grown on Si by template-assisted selective epitaxy for tandem solar cells
Vico Triviño, N., Staudinger, P., Bologna, N., Riel, H., Moselund, K., & Schmid, H. (2019). III-V vertical nanowires grown on Si by template-assisted selective epitaxy for tandem solar cells. In Optical devices and materials for solar energy and solid-state lighting. https://doi.org/10.1364/PVLED.2019.PM2C.5
Template-assisted selective epitaxy for III-V vertical nanowires on Si tandem solar cells
Vico Triviño, N., Staudinger, P., Bologna, N., Riel, H., Moselund, K., & Schmid, H. (2019). Template-assisted selective epitaxy for III-V vertical nanowires on Si tandem solar cells. In 2019 compound semiconductor week (CSW). Proceedings (p. (2 pp.). https://doi.org/10.1109/ICIPRM.2019.8819066
Investigation of InAs/GaSb tunnel diodes on SOI
Convertino, C., Cutaia, D., Schmid, H., Bologna, N., Paletti, P., Ionescu, A. M., … Moselund, K. E. (2017). Investigation of InAs/GaSb tunnel diodes on SOI. P. Sarafis & A. G. Nassiopoulou (Eds.) (pp. 148-151). Presented at the 2017 joint international eurosol workshop and international conference on ultimate integrATIon on silicon-ULIS, eurosoi-ULIS 2017. https://doi.org/10.1109/ULIS.2017.7962586
Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs
Cutaia, D., Schmid, H., Borg, M., Moselund, K., Bologna, N., Olziersky, A., … Riel, H. (2016). Investigation of doping in InAs/GaSb hetero-junctions for tunnel-FETs. In 2016 IEEE silicon nanoelectronics workshop (SNW) (pp. 152-153). https://doi.org/10.1109/SNW.2016.7578028
Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs
Schmid, H., Cutaia, D., Gooth, J., Wirths, S., Bologna, N., Moselund, K. E., & Riel, H. (2016). Monolithic integration of multiple III-V semiconductors on Si for MOSFETs and TFETs. In 2016 IEEE international electron devices meeting (IEDM) (pp. 3.6.1-3.6.4). https://doi.org/10.1109/IEDM.2016.7838340