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Transition to the quantum hall regime in InAs nanowire cross-junctions
Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., … Riel, H. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3), 035028 (9 pp.). https://doi.org/10.1088/1361-6641/ab0591
Bottle-brush-shaped heterostructures of NiO–ZnO nanowires: growth study and sensing properties
Baratto, C., Kumar, R., Comini, E., Ferroni, M., & Campanini, M. (2017). Bottle-brush-shaped heterostructures of NiO–ZnO nanowires: growth study and sensing properties. Nanotechnology, 28(46), 465502 (9 pp.). https://doi.org/10.1088/1361-6528/aa8d2a
Investigation of InAs/GaSb tunnel diodes on SOI
Convertino, C., Cutaia, D., Schmid, H., Bologna, N., Paletti, P., Ionescu, A. M., … Moselund, K. E. (2017). Investigation of InAs/GaSb tunnel diodes on SOI. P. Sarafis & A. G. Nassiopoulou (Eds.) (pp. 148-151). Presented at the 2017 joint international eurosol workshop and international conference on ultimate integrATIon on silicon-ULIS, eurosoi-ULIS 2017. https://doi.org/10.1109/ULIS.2017.7962586