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  • (-) Organizational Unit = 299 Electron Microscopy Center
  • (-) Publication Year = 2010 - 2019
  • (-) Keywords ≠ GaAs
  • (-) Organizational Unit = 200 Advanced Materials and Surfaces
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Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM
Arroyo Rojas Dasilva, Y., Erni, R., Isa, F., Isella, G., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM. Acta Materialia, 167, 159-166. https://doi.org/10.1016/j.actamat.2019.01.031
Effect of thermal annealing on the interface quality of Ge/Si heterostructures
Arroyo Rojas Dasilva,, Isa, F., Isella, G., Erni, R., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Effect of thermal annealing on the interface quality of Ge/Si heterostructures. Scripta Materialia, 170, 52-56. https://doi.org/10.1016/j.scriptamat.2019.05.025
Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates
Arroyo Rojas Dasilva, Y., Rossell, M. D., Isa, F., Erni, R., Isella, G., von Känel, H., & Gröning, P. (2017). Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates. Scripta Materialia, 127, 169-172. https://doi.org/10.1016/j.scriptamat.2016.09.003
Strain engineering in highly mismatched SiGe/Si heterostructures
Isa, F., Jung, A., Salvalaglio, M., Arroyo Rojas Dasilva, Y., Marozau, I., Meduňa, M., … von Känel, H. (2017). Strain engineering in highly mismatched SiGe/Si heterostructures. Materials Science in Semiconductor Processing, 70, 117-122. https://doi.org/10.1016/j.mssp.2016.08.019
Elastic and plastic stress relaxation in highly mismatched SiGe/Si crystals
Isa, F., Jung, A., Salvalaglio, M., Arroyo Rojas Dasilva, Y., Meduňa, M., Barget, M., … von Känel, H. (2016). Elastic and plastic stress relaxation in highly mismatched SiGe/Si crystals. MRS Advances, 1(50), 3403-3408. https://doi.org/10.1557/adv.2016.355
Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking
Isa, F., Salvalaglio, M., Arroyo Rojas Dasilva, Y., Jung, A., Isella, G., Erni, R., … von Känel, H. (2016). Enhancing elastic stress relaxation in SiGe/Si heterostructures by Si pillar necking. Applied Physics Letters, 109(18), 182112 (5 pp.). https://doi.org/10.1063/1.4966948
Growth assisted by glancing angle deposition: a new technique to fabricate highly porous anisotropic thin films
Sanchez-Valencia, J. R., Longtin, R., Rossell, M. D., & Gröning, P. (2016). Growth assisted by glancing angle deposition: a new technique to fabricate highly porous anisotropic thin films. ACS Applied Materials and Interfaces, 8(13), 8686-8693. https://doi.org/10.1021/acsami.6b00232
Analysis of edge threading dislocations <I>b</I>⃗ =1/2(110) in three dimensional Ge crystals grown on (001)-Si substrates
Arroyo Rojas Dasilva, Y., Rossell, M. D., Keller, D., Gröning, P., Isa, F., Kreiliger, T., … Erni, R. (2015). Analysis of edge threading dislocations b⃗ =1/2(110) in three dimensional Ge crystals grown on (001)-Si substrates. Applied Physics Letters, 107(9), 093501 (4 pp.). https://doi.org/10.1063/1.4929422