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  • (-) Organizational Unit = 299 Electron Microscopy Center
  • (-) Publication Year = 2010 - 2019
  • (-) Keywords ≠ GaAs
  • (-) Journal = Physical Review Materials
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Structure and properties of edge dislocations in BiFeO<sub>3</sub>
Agrawal, P., Campanini, M., Rappe, A., Liu, S., Grillo, V., Hébert, C., … Rossell, M. D. (2019). Structure and properties of edge dislocations in BiFeO3. Physical Review Materials, 3(3), 034410 (11 pp.). https://doi.org/10.1103/PhysRevMaterials.3.034410
Stair-rod dislocation cores acting as one-dimensional charge channels in GaAs nanowires
Bologna, N., Agrawal, P., Campanini, M., Knödler, M., Rossell, M. D., Erni, R., & Passerone, D. (2018). Stair-rod dislocation cores acting as one-dimensional charge channels in GaAs nanowires. Physical Review Materials, 2(1), 014603 (6 pp.). https://doi.org/10.1103/PhysRevMaterials.2.014603
Three-dimensional SiGe/Si heterostructures: switching the dislocation sign by substrate under-etching
Rovaris, F., Isa, F., Gatti, R., Jung, A., Isella, G., Montalenti, F., & von Känel, H. (2017). Three-dimensional SiGe/Si heterostructures: switching the dislocation sign by substrate under-etching. Physical Review Materials, 1(7), 073602 (8 pp.). https://doi.org/10.1103/PhysRevMaterials.1.073602