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  • (-) Organizational Unit = 299 Electron Microscopy Center
  • (-) Publication Year = 2010 - 2019
  • (-) Keywords ≠ GaAs
  • (-) Keywords = Si
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Effect of thermal annealing on the interface quality of Ge/Si heterostructures
Arroyo Rojas Dasilva,, Isa, F., Isella, G., Erni, R., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Effect of thermal annealing on the interface quality of Ge/Si heterostructures. Scripta Materialia, 170, 52-56. https://doi.org/10.1016/j.scriptamat.2019.05.025
High-mobility GaSb nanostructures cointegrated with InAs on Si
Borg, M., Schmid, H., Gooth, J., Rossell, M. D., Cutaia, D., Knoedler, M., … Riel, H. (2017). High-mobility GaSb nanostructures cointegrated with InAs on Si. ACS Nano, 11(3), 2554-2560. https://doi.org/10.1021/acsnano.6b04541