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  • (-) Organizational Unit = 299 Electron Microscopy Center
  • (-) Publication Year = 2010 - 2019
  • (-) Journal = Physical Review Letters
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Atomic structure of highly strained BiFeO<SUB>3 </SUB>thin films
Rossell, M. D., Erni, R., Prange, M. P., Idrobo, J. C., Luo, W., Zeches, R. J., … Ramesh, R. (2012). Atomic structure of highly strained BiFeO3 thin films. Physical Review Letters, 108(4), 047601 (5 pp.). https://doi.org/10.1103/PhysRevLett.108.047601
Coherent chromatic effect in the transmission electron microscope
Erni, R. (2016). Coherent chromatic effect in the transmission electron microscope. Physical Review Letters, 116(11), 116101 (5 pp.). https://doi.org/10.1103/PhysRevLett.116.116101
Depolarizing-field effects in epitaxial capacitor heterostructures
Strkalj, N., De Luca, G., Campanini, M., Pal, S., Schaab, J., Gattinoni, C., … Trassin, M. (2019). Depolarizing-field effects in epitaxial capacitor heterostructures. Physical Review Letters, 123(14), 147601 (7 pp.). https://doi.org/10.1103/PhysRevLett.123.147601
Evidence of sharp and diffuse domain walls in BiFeO<SUB>3</SUB> by means of unit-cell-wise strain and polarization maps obtained with high resolution scanning transmission electron microscopy
Lubk, A., Rossell, M. D., Seidel, J., He, Q., Yang, S. Y., Chu, Y. H., … Snoeck, E. (2012). Evidence of sharp and diffuse domain walls in BiFeO3 by means of unit-cell-wise strain and polarization maps obtained with high resolution scanning transmission electron microscopy. Physical Review Letters, 109(4), 047601 (5 pp.). https://doi.org/10.1103/PhysRevLett.109.047601
Interfacial structure and chemistry of GaN on Ge(111)
Zhang, S., Zhang, Y., Cui, Y., Freysoldt, C., Neugebauer, J., Lieten, R. R., … Humphreys, C. J. (2013). Interfacial structure and chemistry of GaN on Ge(111). Physical Review Letters, 111, 256101 (4 pp.). https://doi.org/10.1103/PhysRevLett.111.256101