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  • (-) Publication Year = 2019
  • (-) Empa Authors = Rossell, Marta D.
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<i>In situ</i> template assisted growth of Ag@Au bimetallic nanostructures
Ahmad, N., Keller, D., Rossell, M. D., & Erni, R. (2019). In situ template assisted growth of Ag@Au bimetallic nanostructures. Microscopy and Microanalysis, 25(S1), 41-42. https://doi.org/10.1017/S1431927618015933
Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM
Arroyo Rojas Dasilva, Y., Erni, R., Isa, F., Isella, G., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Atomic-scale structural characterization of grain boundaries in epitaxial Ge/Si microcrystals by HAADF-STEM. Acta Materialia, 167, 159-166. https://doi.org/10.1016/j.actamat.2019.01.031
Buried in-plane ferroelectric domains in fe-doped single-crystalline aurivillius thin films
Campanini, M., Trassin, M., Ederer, C., Erni, R., & Rossell, M. D. (2019). Buried in-plane ferroelectric domains in fe-doped single-crystalline aurivillius thin films. ACS Applied Electronic Materials, 1(6), 1019-1028. https://doi.org/10.1021/acsaelm.9b00180
Depolarizing-field effects in epitaxial capacitor heterostructures
Strkalj, N., De Luca, G., Campanini, M., Pal, S., Schaab, J., Gattinoni, C., … Trassin, M. (2019). Depolarizing-field effects in epitaxial capacitor heterostructures. Physical Review Letters, 123(14), 147601 (7 pp.). https://doi.org/10.1103/PhysRevLett.123.147601
Direct-epitaxial growth of SrAl&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;4&lt;/sub&gt;: Eu,Dy thin films on Al&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; substrate by pulsed laser deposition
Ma, H., Gagnidze, T., Walfort, B., Rossell, M. D., Cancellieri, C., Shorubalko, I., & La Mattina, F. (2019). Direct-epitaxial growth of SrAl2O4: Eu,Dy thin films on Al2O3 substrate by pulsed laser deposition. Applied Surface Science, 491, 53-59. https://doi.org/10.1016/j.apsusc.2019.06.098
Domain-wall motion and interfacial Dzyaloshinskii-Moriya interactions in Pt/Co/Ir(<i>t</i><sub>Ir</sub>)/Ta multilayers
Shahbazi, K., Kim, J. V., Nembach, H. T., Shaw, J. M., Bischof, A., Rossell, M. D., … Marrows, C. H. (2019). Domain-wall motion and interfacial Dzyaloshinskii-Moriya interactions in Pt/Co/Ir(tIr)/Ta multilayers. Physical Review B, 99, 094409 (13 pp.). https://doi.org/10.1103/PhysRevB.99.094409
Effect of thermal annealing on the interface quality of Ge/Si heterostructures
Arroyo Rojas Dasilva, Isa, F., Isella, G., Erni, R., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Effect of thermal annealing on the interface quality of Ge/Si heterostructures. Scripta Materialia, 170, 52-56. https://doi.org/10.1016/j.scriptamat.2019.05.025
Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
Borg, M., Gignac, L., Bruley, J., Malmgren, A., Sant, S., Convertino, C., … Schmid, H. (2019). Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy. Nanotechnology, 30(8), 084004 (8 pp.). https://doi.org/10.1088/1361-6528/aaf547
InAlN underlayer for near ultraviolet InGaN based light emitting diodes
Haller, C., Carlin, J. F., Mosca, M., Rossell, M. D., Erni, R., & Grandjean, N. (2019). InAlN underlayer for near ultraviolet InGaN based light emitting diodes. Applied Physics Express, 12(3), 034002 (4 pp.). https://doi.org/10.7567/1882-0786/ab0147
Structure and properties of edge dislocations in BiFeO&lt;sub&gt;3&lt;/sub&gt;
Agrawal, P., Campanini, M., Rappe, A., Liu, S., Grillo, V., Hébert, C., … Rossell, M. D. (2019). Structure and properties of edge dislocations in BiFeO3. Physical Review Materials, 3(3), 034410 (11 pp.). https://doi.org/10.1103/PhysRevMaterials.3.034410
The ultrathin limit of improper ferroelectricity
Nordlander, J., Campanini, M., Rossell, M. D., Erni, R., Meier, Q. N., Cano, A., … Trassin, M. (2019). The ultrathin limit of improper ferroelectricity. Nature Communications, 10, 5591 (7 pp.). https://doi.org/10.1038/s41467-019-13474-x
Transition to the quantum hall regime in InAs nanowire cross-junctions
Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., … Riel, H. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3), 035028 (9 pp.). https://doi.org/10.1088/1361-6641/ab0591
Zeolite-templated carbon as the cathode for a high energy density dual-ion battery
Dubey, R. J. C., Nüssli, J., Piveteau, L., Kravchyk, K. V., Rossell, M. D., Campanini, M., … Stadie, N. P. (2019). Zeolite-templated carbon as the cathode for a high energy density dual-ion battery. ACS Applied Materials and Interfaces, 11(19), 17686-17696. https://doi.org/10.1021/acsami.9b03886