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Artificial quantum confinement in LaAlO<sub>3</sub>/SrTiO<sub>3</sub> heterostructures
Caputo, M., Boselli, M., Filippetti, A., Lemal, S., Li, D., Chikina, A., … Strocov, V. N. (2020). Artificial quantum confinement in LaAlO3/SrTiO3 heterostructures. Physical Review Materials, 4(3), 035001 (7 pp.). https://doi.org/10.1103/PhysRevMaterials.4.035001
Epitaxial integration of improper ferroelectric hexagonal YMnO<sub>3</sub> thin films in heterostructures
Nordlander, J., Rossell, M. D., Campanini, M., Fiebig, M., & Trassin, M. (2020). Epitaxial integration of improper ferroelectric hexagonal YMnO3 thin films in heterostructures. Physical Review Materials, 4(12), 124403 (6 pp.). https://doi.org/10.1103/PhysRevMaterials.4.124403
Atomic structure and electronic properties of planar defects in SrFeO<sub>3-<em>δ</em></sub> thin films
Rossell, M. D., Agrawal, P., Campanini, M., Passerone, D., & Erni, R. (2020). Atomic structure and electronic properties of planar defects in SrFeO3-δ thin films. Physical Review Materials, 4(7), 075001 (8 pp.). https://doi.org/10.1103/PhysRevMaterials.4.075001
Structure and properties of edge dislocations in BiFeO<sub>3</sub>
Agrawal, P., Campanini, M., Rappe, A., Liu, S., Grillo, V., Hébert, C., … Rossell, M. D. (2019). Structure and properties of edge dislocations in BiFeO3. Physical Review Materials, 3(3), 034410 (11 pp.). https://doi.org/10.1103/PhysRevMaterials.3.034410
Granular superconductivity and charge/orbital order in YBa<sub>2</sub>Cu<sub>3</sub>O<sub>7</sub>/manganite trilayers
Khmaladze, J., Sarkar, S., Soulier, M., Lyzwa, F., de Andres Prada, R., Perret, E., … Bernhard, C. (2019). Granular superconductivity and charge/orbital order in YBa2Cu3O7/manganite trilayers. Physical Review Materials, 3(8), 084801 (10 pp.). https://doi.org/10.1103/PhysRevMaterials.3.084801
Stair-rod dislocation cores acting as one-dimensional charge channels in GaAs nanowires
Bologna, N., Agrawal, P., Campanini, M., Knödler, M., Rossell, M. D., Erni, R., & Passerone, D. (2018). Stair-rod dislocation cores acting as one-dimensional charge channels in GaAs nanowires. Physical Review Materials, 2(1), 014603 (6 pp.). https://doi.org/10.1103/PhysRevMaterials.2.014603
Implications of heterostructural alloying for enhanced piezoelectric performance of (Al,Sc)N
Talley, K. R., Millican, S. L., Mangum, J., Siol, S., Musgrave, C. B., Gorman, B., … Brennecka, G. L. (2018). Implications of heterostructural alloying for enhanced piezoelectric performance of (Al,Sc)N. Physical Review Materials, 2(6), 063802 (11 pp.). https://doi.org/10.1103/PhysRevMaterials.2.063802
Three-dimensional SiGe/Si heterostructures: switching the dislocation sign by substrate under-etching
Rovaris, F., Isa, F., Gatti, R., Jung, A., Isella, G., Montalenti, F., & von Känel, H. (2017). Three-dimensional SiGe/Si heterostructures: switching the dislocation sign by substrate under-etching. Physical Review Materials, 1(7), 073602 (8 pp.). https://doi.org/10.1103/PhysRevMaterials.1.073602