Active Filters

  • (-) Journal = Semiconductor Science and Technology
Search Results 1 - 8 of 8
  • RSS Feed
Select Page
High conductivity InAlN/GaN multi-channel two-dimensional electron gases
Sohi, P., Carlin, J. F., Rossell, M. D., Erni, R., Grandjean, N., & Matioli, E. (2021). High conductivity InAlN/GaN multi-channel two-dimensional electron gases. Semiconductor Science and Technology, 36(5), 055020 (6 pp.). https://doi.org/10.1088/1361-6641/abf3a7
Transition to the quantum hall regime in InAs nanowire cross-junctions
Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., … Riel, H. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3), 035028 (9 pp.). https://doi.org/10.1088/1361-6641/ab0591
Multi-wavelength distributed feedback quantum cascade lasers for broadband trace gas spectroscopy
Shahmohammadi, M., Kapsalidis, F., Süess, M. J., Gini, E., Beck, M., Hundt, M., … Faist, J. (2019). Multi-wavelength distributed feedback quantum cascade lasers for broadband trace gas spectroscopy. Semiconductor Science and Technology, 34(8), 083001 (14 pp.). https://doi.org/10.1088/1361-6641/ab2838
Thermal conductivity of half-Heusler superlattices
Jaeger, T., Hołuj, P., Mix, C., Euler, C., Aguirre, M. H., Populoh, S., … Jakob, G. (2014). Thermal conductivity of half-Heusler superlattices. Semiconductor Science and Technology, 29(12), 124003 (5 pp.). https://doi.org/10.1088/0268-1242/29/12/124003
Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis
Scopece, D., Montalenti, F., Bollani, M., Chrastina, D., & Bonera, E. (2014). Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis. Semiconductor Science and Technology, 29(9), 095012 (11 pp.). https://doi.org/10.1088/0268-1242/29/9/095012
Defect evolution during catastrophic optical damage of diode lasers
Hempel, M., La Mattina, F., Tomm, J. W., Zeimer, U., Broennimann, R., & Elsaesser, T. (2011). Defect evolution during catastrophic optical damage of diode lasers. Semiconductor Science and Technology, 26(7), 075020 (10 pp.). https://doi.org/10.1088/0268-1242/26/7/075020
Low-temperature roll-to-roll coating procedure of dye-sensitized solar cell photoelectrodes on flexible polymer-based substrates
Tinguely, J. C., Solarska, R., Braun, A., & Graule, T. (2011). Low-temperature roll-to-roll coating procedure of dye-sensitized solar cell photoelectrodes on flexible polymer-based substrates. Semiconductor Science and Technology, 26(4), 045007 (6 pp.). https://doi.org/10.1088/0268-1242/26/4/045007
<I>In situ</I> investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering
Meduňa, M., Novák, J., Bauer, G., Holý, V., Falub, C. V., Tsujino, S., & Grützmacher, D. (2007). In situ investigations of Si and Ge interdiffusion in Ge-rich Si/SiGe multilayers using x-ray scattering. Semiconductor Science and Technology, 22(4), 447-453. https://doi.org/10.1088/0268-1242/22/4/026