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The Si<sub>3</sub>N<sub>4</sub>/TiN interface: 6. Si/TiN(001) grown and analyzed <em>in situ</em> using angle-resolved X-ray photoelectron spectroscopy
Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 6. Si/TiN(001) grown and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 82-91. https://doi.org/10.1116/11.20121006
Improved test setup for MEMS mechanical strength investigations and fabrication process qualification
Bandi, T., Maeder, X., Dommann, A., Shea, H., & Neels, A. (2014). Improved test setup for MEMS mechanical strength investigations and fabrication process qualification. In H. R. Shea & R. Ramesham (Eds.), Proceedings of SPIE: Vol. 8975. Reliability, packaging, testing, and characterization of MOEMS/MEMS, nanodevices, and nanomaterials XIII (p. 897509 (7 pp.). https://doi.org/10.1117/12.2044212
Permanent reduction of dissipation in nanomechanical Si resonators by chemical surface protection
Tao, Y., Navaretti, P., Hauert, R., Grob, U., Poggio, M., & Degen, C. L. (2015). Permanent reduction of dissipation in nanomechanical Si resonators by chemical surface protection. Nanotechnology, 26, 465501 (9 pp.). https://doi.org/10.1088/0957-4484/26/46/465501
A new push-pull sample design for microscale mode 1 fracture toughness measurements under uniaxial tension
Schwiedrzik, J. J., Ast, J., Pethö, L., Maeder, X., & Michler, J. (2018). A new push-pull sample design for microscale mode 1 fracture toughness measurements under uniaxial tension. Fatigue and Fracture of Engineering Materials and Structures, 41(5), 991-1001. https://doi.org/10.1111/ffe.12741
Fracture of silicon: influence of rate, positioning accuracy, FIB machining, and elevated temperatures on toughness measured by pillar indentation splitting
Lauener, C. M., Petho, L., Chen, M., Xiao, Y., Michler, J., & Wheeler, J. M. (2018). Fracture of silicon: influence of rate, positioning accuracy, FIB machining, and elevated temperatures on toughness measured by pillar indentation splitting. Materials and Design, 142, 340-349. https://doi.org/10.1016/j.matdes.2018.01.015
Corrosion mechanisms of diamond-like carbon coated interlayers & interfaces
Ilić, E. (2019). Corrosion mechanisms of diamond-like carbon coated interlayers & interfaces [Doctoral dissertation]. École Polytechnique Fédérale de Lausanne (EPFL).
Self-assembly of hierarchical Ti<sub>3</sub>C<sub>2</sub>Tx-CNT/SiNPs resilient films for high performance lithium ion battery electrodes
Cao, D., Ren, M., Xiong, J., Pan, L., Wang, Y., Ji, X., … Zhang, C. (J. ). (2020). Self-assembly of hierarchical Ti3C2Tx-CNT/SiNPs resilient films for high performance lithium ion battery electrodes. Electrochimica Acta, 348, 136211 (11 pp.). https://doi.org/10.1016/j.electacta.2020.136211
Size-dependent plasticity and activation parameters of lithographically-produced silicon micropillars
Chen, M., Wehrs, J., Sologubenko, A. S., Rabier, J., Michler, J., & Wheeler, J. M. (2020). Size-dependent plasticity and activation parameters of lithographically-produced silicon micropillars. Materials and Design, 189, 108506 (13 pp.). https://doi.org/10.1016/j.matdes.2020.108506
Epitaxial growth of silicon on silicon wafers by direct laser melting
Le Dantec, M., Abdulstaar, M., Leparoux, M., & Hoffmann, P. (2020). Epitaxial growth of silicon on silicon wafers by direct laser melting. Materials, 13(21), 4728 (8 pp.). https://doi.org/10.3390/ma13214728
Monolithic and single-crystalline aluminum-silicon heterostructures
Wind, L., Böckle, R., Sistani, M., Schweizer, P., Maeder, X., Michler, J., … Weber, W. M. (2022). Monolithic and single-crystalline aluminum-silicon heterostructures. ACS Applied Materials and Interfaces, 14(22), 26238-26244. https://doi.org/10.1021/acsami.2c04599
Composition dependent electrical transport in Si<sub>1−x</sub>Ge<sub>x</sub> nanosheets with monolithic single-elementary Al contacts
Wind, L., Sistani, M., Böckle, R., Smoliner, J., Vukŭsić, L., Aberl, J., … Weber, W. M. (2022). Composition dependent electrical transport in Si1−xGex nanosheets with monolithic single-elementary Al contacts. Small, 18(44), 2204178 (9 pp.). https://doi.org/10.1002/smll.202204178