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	Effect of thermal annealing on the interface quality of Ge/Si heterostructures Arroyo Rojas Dasilva, Isa, F., Isella, G., Erni, R., von Känel, H., Gröning, P., & Rossell, M. D. (2019). Effect of thermal annealing on the interface quality of Ge/Si heterostructures. Scripta Materialia, 170, 52-56. https://doi.org/10.1016/j.scriptamat.2019.05.025 Detailed Record Published Version
	A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates Kozak, R., Prieto, I., Arroyo Rojas Dasilva, Y., Erni, R., von Känel, H., Bona, G. L., & Rossell, M. D. (2018). A comparative study of defect formation in GaAs nanocrystals selectively grown on nanopatterned and flat Si(001) substrates. Micron, 113, 83-90. https://doi.org/10.1016/j.micron.2018.06.018 Detailed Record Published Version
	Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates Arroyo Rojas Dasilva, Y., Rossell, M. D., Isa, F., Erni, R., Isella, G., von Känel, H., & Gröning, P. (2017). Strain relaxation in epitaxial Ge crystals grown on patterned Si(001) substrates. Scripta Materialia, 127, 169-172. https://doi.org/10.1016/j.scriptamat.2016.09.003 Detailed Record Published Version
	Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures Kozak, R., Prieto, I., Arroyo Rojas Dasilva, Y., Erni, R., Skibitzki, O., Capellini, G., … Rossell, M. D. (2017). Strain relaxation in epitaxial GaAs/Si (0 0 1) nanostructures. Philosophical Magazine, 97(31), 2845-2857. https://doi.org/10.1080/14786435.2017.1355117 Detailed Record Published Version