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Transition to the quantum hall regime in InAs nanowire cross-junctions
Gooth, J., Borg, M., Schmid, H., Bologna, N., Rossell, M. D., Wirths, S., … Riel, H. (2019). Transition to the quantum hall regime in InAs nanowire cross-junctions. Semiconductor Science and Technology, 34(3), 035028 (9 pp.). https://doi.org/10.1088/1361-6641/ab0591
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High-mobility GaSb nanostructures cointegrated with InAs on Si
Borg, M., Schmid, H., Gooth, J., Rossell, M. D., Cutaia, D., Knoedler, M., … Riel, H. (2017). High-mobility GaSb nanostructures cointegrated with InAs on Si. ACS Nano, 11(3), 2554-2560. https://doi.org/10.1021/acsnano.6b04541
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