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The Si<sub>3</sub>N<sub>4</sub>/TiN interface: 1. TiN(001) grown and analyzed <em>in situ</em> using angle-resolved X-ray photoelectron spectroscopy
Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 1. TiN(001) grown and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 33-41. https://doi.org/10.1116/11.20121001
The Si<sub>3</sub>N<sub>4</sub>/TiN interface: 2. Si<sub>3</sub>N<sub>4</sub>/TiN(001) grown with a ―7 V substrate bias and analyzed <em>in situ</em> using angle-resolved X-ray photoelectron spec
Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 2. Si3N4/TiN(001) grown with a ―7 V substrate bias and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 42-51. https://doi.org/10.1116/11.20121002
The Si<sub>3</sub>N<sub>4</sub>/TiN interface: 3. Si<sub>3</sub>N<sub>4</sub>/TiN(001) grown with a ―150 V substrate bias and analyzed <em>in situ</em> using angle-resolved X-ray photoelectron sp
Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 3. Si3N4/TiN(001) grown with a ―150 V substrate bias and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 52-61. https://doi.org/10.1116/11.20121003
The Si<sub>3</sub>N<sub>4</sub>/TiN interface: 4. Si<sub>3</sub>N<sub>4</sub>/TiN(001) grown with a ―250 V substrate bias and analyzed <em>in situ</em> using angle-resolved X-ray photoelectron sp
Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 4. Si3N4/TiN(001) grown with a ―250 V substrate bias and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 62-71. https://doi.org/10.1116/11.20121004
The Si<sub>3</sub>N<sub>4</sub>/TiN interface: 5. TiN/Si<sub>3</sub>N<sub>4</sub> grown and analyzed <em>in situ</em> using angle-resolved X-ray photoelectron spectroscopy
Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 5. TiN/Si3N4 grown and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 72-81. https://doi.org/10.1116/11.20121005
The Si<sub>3</sub>N<sub>4</sub>/TiN interface: 6. Si/TiN(001) grown and analyzed <em>in situ</em> using angle-resolved X-ray photoelectron spectroscopy
Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 6. Si/TiN(001) grown and analyzed in situ using angle-resolved X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 82-91. https://doi.org/10.1116/11.20121006
The Si<sub>3</sub>N<sub>4</sub>/TiN interface: 7. Ti/TiN(001) grown and analyzed <em>in situ</em> using X-ray photoelectron spectroscopy
Haasch, R. T., Patscheider, J., Hellgren, N., Petrov, I., & Greene, J. E. (2012). The Si3N4/TiN interface: 7. Ti/TiN(001) grown and analyzed in situ using X-ray photoelectron spectroscopy. Surface Science Spectra, 19(1), 92-97. https://doi.org/10.1116/11.20121007