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Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy
Borg, M., Gignac, L., Bruley, J., Malmgren, A., Sant, S., Convertino, C., … Schmid, H. (2019). Facet-selective group-III incorporation in InGaAs template assisted selective epitaxy. Nanotechnology, 30(8), 084004 (8 pp.). https://doi.org/10.1088/1361-6528/aaf547
Dopant-induced modifications of Ga<sub>x</sub>In<sub>(1−x)</sub>P nanowire-based p−n junctions monolithically integrated on Si(111)
Bologna, N., Wirths, S., Francaviglia, L., Campanini, M., Schmid, H., Theofylaktopoulos, V., … Rossell, M. D. (2018). Dopant-induced modifications of GaxIn(1−x)P nanowire-based p−n junctions monolithically integrated on Si(111). ACS Applied Materials and Interfaces, 10(38), 32588-32596. https://doi.org/10.1021/acsami.8b10770
High-mobility GaSb nanostructures cointegrated with InAs on Si
Borg, M., Schmid, H., Gooth, J., Rossell, M. D., Cutaia, D., Knoedler, M., … Riel, H. (2017). High-mobility GaSb nanostructures cointegrated with InAs on Si. ACS Nano, 11(3), 2554-2560. https://doi.org/10.1021/acsnano.6b04541