Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET

Dutta D, De DS, Fan D, Roy S, Alfieri G, Camarda M, Amsler M, Lehmann J, Bartolf H, Goedecker S & Jung TA
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Dutta, D., De, D. S., Fan, D., Roy, S., Alfieri, G., Camarda, M., … Jung, T. A. (2019). Evidence for carbon clusters present near thermal gate oxides affecting the electronic band structure in SiC-MOSFET. Applied Physics Letters, 115(10), 101601 (5 pp.). https://doi.org/10.1063/1.5112779