Radiation damage study of SensL J-series silicon photomultipliers using 101.4 MeV protons

Ulyanov A, Murphy D, Mangan J, Gupta V, Hajdas W, de Faoite D, Shortt B, Hanlon L & McBreen S
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Ulyanov, A., Murphy, D., Mangan, J., Gupta, V., Hajdas, W., de Faoite, D., … McBreen, S. (2020). Radiation damage study of SensL J-series silicon photomultipliers using 101.4 MeV protons. Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 976, 164203 (14 pp.). https://doi.org/10.1016/j.nima.2020.164203