Metal to insulator transition at the surface of V&lt;sub&gt;2&lt;/sub&gt;O&lt;sub&gt;3&lt;/sub&gt; thin films: an &lt;em&gt;in-situ&lt;/em&gt; view

Caputo, M.; Jandke, J.; Cappelli, E.; Chaluvadi, S.K.; Bonini Guedes, E.; Naamneh, M.; Vinai, G.; Fujii, J.; Torelli, P.; Vobornik, I.; Goldoni, A.; Orgiani, P.; Baumberger, F.; Radovic, M.; Panaccione, G.

doi:10.1016/j.apsusc.2021.151608

Metal to insulator transition at the surface of V₂O₃ thin films: an in-situ view

Caputo M, Jandke J, Cappelli E, Chaluvadi SK, Bonini Guedes E, Naamneh M, Vinai G, Fujii J, Torelli P, Vobornik I, Goldoni A, Orgiani P, Baumberger F, Radovic M & Panaccione G

Citation

Caputo, M., Jandke, J., Cappelli, E., Chaluvadi, S. K., Bonini Guedes, E., Naamneh, M., … Panaccione, G. (2022). Metal to insulator transition at the surface of V₂O₃ thin films: an in-situ view. Applied Surface Science, 574, 151608 (7 pp.). https://doi.org/10.1016/j.apsusc.2021.151608

Persistent URL https://www.dora.lib4ri.ch/psi/islandora/object/psi:39449

V₂O₃ has long been studied as a prototypical strongly correlated material. The difficulty in obtaining clean, well ordered surfaces, however, hindered the use of surface sensitive techniques to study its electronic structure. Here we show by means of X-ray diffraction and electrical transport that thin films prepared by pulsed laser deposition can reproduce the functionality of bulk V₂O₃. The same films, when transferred in-situ, show an excellent surface quality as indicated by scanning tunnelling microscopy and low energy electron diffraction, representing a viable approach to study the metal-insulator transition in V₂O₃ by means of angle-resolved photoemission spectroscopy. Combined, these two aspects pave the way for the use of V₂O₃ thin films in device-oriented heterostructures.