The slow muon technique was used to study the p-n junction of chalcopyrite solar cells. A defect layer near the interface was identified and the passivation of the defects by buffer layers was studied. Several cover layers on top of the chalcopyrite Cu(In,Ga)Se₂ (CIGS) semiconductor absorber were investigated in this work, namely CdS, ZnSnO, Al₂O₃ and SiO₂. Quantitative results were obtained: The defect layer extends about 50 nm into the CIGS absorber, the relevant disturbance is strain in the lattice, and CdS provides the best passivation, oxides have a minor effect. In the present contribution, specific aspects of the low-energy muon technique in connection with this research are discussed.