Intrinsic and extrinsic electrically active point defects in SiC

Grossner, Ulrike; Grillenberger, Joachim K.; Woerle, Judith; Bathen, Marianne E.; Müting, Johanna

doi:10.1002/9783527824724.ch6

Intrinsic and extrinsic electrically active point defects in SiC

Grossner U, Grillenberger JK, Woerle J, Bathen ME & Müting J

Citation

Grossner, U., Grillenberger, J. K., Woerle, J., Bathen, M. E., & Müting, J. (2022). Intrinsic and extrinsic electrically active point defects in SiC. In P. Wellmann, N. Ohtani, & R. Rupp (Eds.), Wide bandgap semiconductors for power electronics. Materials, devices, applications. Volume 2 (pp. 137-168). https://doi.org/10.1002/9783527824724.ch6

Persistent URL https://www.dora.lib4ri.ch/psi/islandora/object/psi:52159

Details

Publication Type

Book Chapter

Title

Intrinsic and extrinsic electrically active point defects in SiC

Author(s)

Grossner, Ulrike

Grillenberger, Joachim K. (8130 Proton Facilities)

Woerle, Judith

Bathen, Marianne E.

Müting, Johanna