Electron beam collimation with a 40,000 tip double-gate metal field emitter array and in-situ control of nanotip sharpness distribution

Helfenstein, P.; Guzenko, V.A.; Fink, H.W.; Tsujino, S.

doi:10.1109/IVNC.2013.6624747

Electron beam collimation with a 40,000 tip double-gate metal field emitter array and in-situ control of nanotip sharpness distribution

Helfenstein P, Guzenko VA, Fink HW & Tsujino S

Citation

Helfenstein, P., Guzenko, V. A., Fink, H. W., & Tsujino, S. (2013). Electron beam collimation with a 40,000 tip double-gate metal field emitter array and in-situ control of nanotip sharpness distribution. 2013 26th international vacuum nanoelectronics conference, IVNC 2013. (p. 6624747). Presented at the 2013 26th international vacuum nanoelectronics conference, IVNC 2013. https://doi.org/10.1109/IVNC.2013.6624747

Persistent URL https://www.dora.lib4ri.ch/psi/islandora/object/psi:65900

A double-gate metal field emitter array consisting of 40,000 emitter tips with large collimation gate apertures was was fabricated and its beam collimation property was tested. By applying a negative potential to the on-chip collimation gate electrode, a reduction of the beam envelope down to the array size with minimal reduction of the emission current was observed. In a further step, a noble gas conditioning process was applied to the tested device resulting in improved emission uniformity of the array.

Details

Publication Type

Proceedings Paper

Title

Electron beam collimation with a 40,000 tip double-gate metal field emitter array and in-situ control of nanotip sharpness distribution

Author(s)

Helfenstein, P. (6214 Feldemitter SwissFEL)

Guzenko, V.A. (6212 X-ray Nano-Optics)

Fink, H.W.

Tsujino, S. (6214 Vakuum-Nanoelektronik)

Editor(s)