This work presents an advanced electronic device, a high-k dielectric FinFET (Fin Field Effect Transistor), as new label-free sensor for enhanced sensing integrated circuits. FinFET-based sensors are demonstrated pH sensitive with high current variation per pH unit and significant considerations on the operation regime are carried out. Metal gate n-channel FinFETs, designed with the same architecture, are integrated and characterized together with the sensors, showing excellent transistor properties. All devices investigated in this paper are fabricated on bulk-silicon wafers with Fin width between 40 and 20 nm. © 2013 IEEE.