Strained Ge microbridges to obtain a direct bandgap laser

Geiger R, Süess MJ, Bonzon C, Spolenak R, Faist J & Sigg H
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Geiger, R., Süess, M. J., Bonzon, C., Spolenak, R., Faist, J., & Sigg, H. (2014). Strained Ge microbridges to obtain a direct bandgap laser. In International SiGe technology and device meeting, ISTDM. 7th international silicon-germanium technology and device meeting, ISTDM 2014 (pp. 7-8). https://doi.org/10.1109/ISTDM.2014.6874706
https://www.dora.lib4ri.ch/psi/islandora/object/psi:66158

Recent demonstrations of light emission from group IV materials such as Ge and its alloy with Sn renew the vision for the realization of an all group IV based opto-electronic platform. We compare some of these approaches to our strain method and mention rewarding research to further improve materials and concepts.

Details
Publication Type

Proceedings Paper

Title

Strained Ge microbridges to obtain a direct bandgap laser

Author(s)

Geiger, Richard (6200 Micro- and Nanotechnology)

Süess, Martin J. (0000 PSI)

Bonzon, Christopher

Spolenak, Ralph

Faist, Jérôme

Sigg, Hans (6200 Micro- and Nanotechnology)

Conference Proceedings

7th international silicon-germanium technology and device meeting, ISTDM 2014

Editor(s)

(editor)

Series Title

International SiGe technology and device meeting, ISTDM

Publisher

IEEE

Start Page

7

End Page

8

Publication Year

2014

Conference

7th international silicon-germanium technology and device meeting, ISTDM 2014

Conference Place

Singapore

Conference Date

June 2-4, 2014

Collection

PSI Publications