Carrier lifetimes in uniaxially strained Ge micro bridges

Geiger R, Suess MJ, Bonzon C, Frigerio J, Chrastina D, Isella G, Spolenak R, Faist J & Sigg H
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Geiger, R., Suess, M. J., Bonzon, C., Frigerio, J., Chrastina, D., Isella, G., … Sigg, H. (2014). Carrier lifetimes in uniaxially strained Ge micro bridges. In IEEE international conference on group IV photonics GFP. International conference on group IV photonics (pp. 227-228). https://doi.org/10.1109/Group4.2014.6961937
https://www.dora.lib4ri.ch/psi/islandora/object/psi:66182

The performance of strained Ge bridges is compared with unprocessed layers in terms of their non-radiative recombination time. Despite strain and additionally introduced free surfaces, the lifetime for the strained microstructures does not decrease.

Details
Publication Type

Proceedings Paper

Title

Carrier lifetimes in uniaxially strained Ge micro bridges

Author(s)

Geiger, R. (6200 Micro- and Nanotechnology)

Suess, M.J. (0000 PSI)

Bonzon, C.

Frigerio, J.

Chrastina, D.

Isella, G.

Spolenak, R.

Faist, J.

Sigg, H. (6200 Micro- and Nanotechnology)

Conference Proceedings

International conference on group IV photonics

Editor(s)

(editor)

Series Title

IEEE international conference on group IV photonics GFP

Publisher

IEEE Computer Society

Start Page

227

End Page

228

Publication Year

2014

Conference

11th international conference on group IV photonics, GFP 2014

Conference Place

Paris

Conference Date

August 27-29, 2014

Collection

PSI Publications