Proton energy dependence of SiC power MOSFET single event burnout sensitivity

Niskanen, K.; Javanainen, A.; Martinella, C.; Hajdas, W.; Grossner, U.; Kettunen, H.

doi:10.1109/TNS.2025.3550609

Proton energy dependence of SiC power MOSFET single event burnout sensitivity

Niskanen K, Javanainen A, Martinella C, Hajdas W, Grossner U & Kettunen H

Citation

Niskanen, K., Javanainen, A., Martinella, C., Hajdas, W., Grossner, U., & Kettunen, H. (2025). Proton energy dependence of SiC power MOSFET single event burnout sensitivity. IEEE Transactions on Nuclear Science, 72(4), 1412-1417. https://doi.org/10.1109/TNS.2025.3550609

Persistent URL https://www.dora.lib4ri.ch/psi/islandora/object/psi:69287

The proton energy dependence of single event burnout (SEB) sensitivity of silicon carbide (SiC) power MOS-FETs is studied. The experimental results show that SEB is dependent on the primary proton energy and the drain bias voltage applied during irradiation. The secondary particles, produced by the nuclear reactions between primary particles and device materials, are studied using Geant4 simulations. A method for finding the criteria for the failure based on experimental radiation data and Geant4 simulation data is presented.

Details

Publication Type

Journal Article

Title

Proton energy dependence of SiC power MOSFET single event burnout sensitivity

Author(s)

Niskanen, K.

Javanainen, A.

Martinella, C.

Hajdas, W. (3206 Detectors, Irradiation, Applied Particle Physics)

Grossner, U.

Kettunen, H.