Low energy μSR studies of semiconductor interfaces

Eshchenko DG, Storchak VG, Morenzoni E, Prokscha T, Suter A, Liu X & Furdyna JK
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Eshchenko, D. G., Storchak, V. G., Morenzoni, E., Prokscha, T., Suter, A., Liu, X., & Furdyna, J. K. (2009). Low energy μSR studies of semiconductor interfaces. Physica B: Condensed Matter, 404(5-7), 873-875. https://doi.org/10.1016/j.physb.2008.11.148
https://www.dora.lib4ri.ch/psi/islandora/object/psi:17276

Low Energy μSR (LEM) experiments have been performed on bilayers consisting of 100 nm thick heavily doped films of n or p-type GaAs each deposited on semi-insulating (SI) GaAs. The diamagnetic fraction seen in SI-GaAs depends on the conductivity type of the film. The results show that LEM experiments can be used to investigate surface/interface processes in semiconductors.

Details
Publication Type

Journal Article

Title

Low energy μSR studies of semiconductor interfaces

Author(s)

Eshchenko, D.G. (0000 PSI)

Storchak, V.G.

Morenzoni, E. (3500 Muon Spin Spectroscopy)

Prokscha, T. (3502 Low Energy Muons)

Suter, A. (3502 Low Energy Muons)

Liu, X.

Furdyna, J.K.

Journal

Physica B: Condensed Matter

Volume

404

Issue

5-7

Start Page

873

End Page

875

Publication Year

2009

Peer Review

Yes

Keywords

GaAs
semiconductor-insulator interface
muon track

Facility

SmuS

Beamline

LEM

Collection

PSI Publications