High-pressure muon spin rotation studies of magnetic semiconductors: EuS

Eshchenko DG, Storchak VG, Morenzoni E & Andreica D
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Eshchenko, D. G., Storchak, V. G., Morenzoni, E., & Andreica, D. (2009). High-pressure muon spin rotation studies of magnetic semiconductors: EuS. Physica B: Condensed Matter, 404(5-7), 903-905. https://doi.org/10.1016/j.physb.2008.11.140
https://www.dora.lib4ri.ch/psi/islandora/object/psi:17325

Muon spin relaxation studies under hydrostatic pressure up to 15 kbar have been carried out in EuS. In the ferromagnetic state, the internal magnetic field Bμ seen by the muon is found to be extremely sensitive to pressure with relative change of order d ln(B)/dp∼1.2%/kbar.

Details
Publication Type

Journal Article

Title

High-pressure muon spin rotation studies of magnetic semiconductors: EuS

Author(s)

Eshchenko, D.G. (0000 PSI)

Storchak, V.G.

Morenzoni, E. (3500 Muon Spin Spectroscopy)

Andreica, D. (3501 Bulk-µSR)

Journal

Physica B: Condensed Matter

Volume

404

Issue

5-7

Start Page

903

End Page

905

Publication Year

2009

Peer Review

Yes

Keywords

EuS
high pressure
ferromagnetic transition
muon
magnetic semiconductors

Facility

SmuS

Beamline

GPD

Collection

PSI Publications