The project aims at studying aluminum and boron acceptor impurities in silicon carbide. These impurities are modeled by muonic atoms formed via negative muon capture by Si or C atoms of the host material. To distinguish between the signals from muons captured by Si and C atoms the energy of characteristic X-rays emitted during the muon transition to the 1s atomic state is measured and used for histogram routing (X-ray triggered μSR).
The first experimental results with an n-type 4H-SiC are reported.