Photoexcited TF-μSR measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently doped samples under both LF and TF configurations. In addition, the temperature dependence of Mu_BC⁺ in p-type Si suggests that the diamagnetic charge exchange processes are similar to that of intrinsic Si.