The low temperature lattice site of the implanted μ⁺ particle and its subsequent delocalization at higher temperatures was investigated in single crystal white tin for 2<T<200K. At low temperatures the μ⁺ was found to reside at the interstitial sites of type d. With increasing temperature thermally activated hopping sets in at T = 48 ± 2 K, resulting in complete delocalization near 60 K. The activation energy for hopping, E_a = 113 ± 15meV, is substantially higher than that found previously for the equally tetragonal indium.