The dielectric properties of TiNb₂O₇ (TNO) thin films are studied in Metal-Insulator-Metal configuration (Au/TiNb₂O₇/Pt) devices. The temperature dependence of the dielectric dispersion and the AC conductivity behavior is strongly dependent on TNO thin film thickness. Low thickness (∼236 nm) films shows considerably less variation with temperatures than their thicker counterparts (∼480 nm). These behaviors are explained on physical basis - nearly constant loss (NCL) and Jonscher's Universal Dielectric Response (UDR). The TNO thin films show large dielectric constant (∼59-73) and moderate dielectric loss (∼0.07-0.11). The AC conductivity values of the thin films lie in the range of about (10^-8 to 10^-9) at 10 kHz. The thicker films show DC conductivity values which are thermally activated with an activation energy of about 0.44 eV. This is slightly higher (about 0.1 eV) than ω_p in Jonscher's UDR response and this discrepancy is explained on the basis of mixed ionic electronic conduction in TNO thin films. The possible role of growth morphology in the dielectric response is also briefly mentioned.