We report on the uniaxial strain and thermal conductivity of well-ordered, suspended silicon nanowire arrays between 10 to 20 nm width and 22 nm half-pitch, fabricated by extreme-ultraviolet (UV) interference lithography. Laser-power-dependent Raman spectroscopy showed that nanowires connected monolithically to the bulk had a consistent strain of ∼0.1%, whereas nanowires clamped by metal exhibited variability and high strain of up to 2.3%, having implications in strain engineering of nanowires. The thermal conductivity at room temperature was measured to be ∼1W/mK for smooth nanowires and ∼0.1W/m K for rougher ones, similar to results by other investigators. We found no modification of the bulk properties in terms of intrinsic scattering, and therefore, the decrease in thermal conductivity is mainly due to boundary scattering. Different types of surface roughness, such as constrictions and line-edge roughness, may play roles in the scattering of phonons of different wavelengths. Such low thermal conductivities would allow for very efficient thermal energy harvesting, approaching and passing values achieved by state-of-the-art thermoelectric materials.