Correlation between strain and maximum lasing temperature in GeSn microbridges

Chretien J, Pauc N, Thai QM, Armand Pilon F, Casiez L, Frauenrath M, Khazaka R, Rouchon D, Faist J, Sigg H, Chelnokov A, Reboud V, Tardif S, Hartmann JM & Calvo V
Choose the citation style.
Chretien, J., Pauc, N., Thai, Q. M., Armand Pilon, F., Casiez, L., Frauenrath, M., … Calvo, V. (2020). Correlation between strain and maximum lasing temperature in GeSn microbridges. In IEEE photonics conference (IPC): Vol. 2020. 2020 IEEE photonics conference (IPC). Proceedings (p. 9252430 (2 pp.). https://doi.org/10.1109/IPC47351.2020.9252430
https://www.dora.lib4ri.ch/psi/islandora/object/psi:35770

Tensile strained GeSn lasers could be used as tunable infrared light sources in silicon photonics. We explore here the relationship between the uniaxial tensile strain applied to suspended microbridges and the maximum lasing temperature reached in GeSn 13% cavities.

Details
Publication Type

Proceedings Paper

Title

Correlation between strain and maximum lasing temperature in GeSn microbridges

Author(s)

Chretien, Jeremie

Pauc, Nicolas

Thai, Quang Minh

Armand Pilon, Francesco (6218 Quantum Technologies)

Casiez, Lara

Frauenrath, Marvin

Khazaka, Rami

Rouchon, Denis

Faist, Jerome

Sigg, Hans

Chelnokov, Alexei

Reboud, Vincent

Tardif, Samuel

Hartmann, Jean Michel

Calvo, Vincent

Conference Proceedings

2020 IEEE photonics conference (IPC). Proceedings

Editor(s)

(editor)

Series Title

IEEE photonics conference (IPC)

Publisher

IEEE

Publication Place

sine loco

Volume

2020

Start Page

9252430 (2 pp.)

Publication Year

2020

Conference

2020 IEEE photonics conference

Conference Place

Vancouver, Canada

Conference Date

September 28 - October 1, 2020

Keywords

GeSn
laser
strain
tunability

Collection

PSI Publications